This is the best youtube video I have found about MRAM, one way that spintronics is extremely important and how it could change everything, and it is based on the spin transfer torque (STT). STT is exerted when a stream of aligned electrons hit a different magnetic layer. The exerted force causes the new layer to align with the current. This effect is utilized in magnetoresistive RAM to store data with spin states. Instead of using capacitors that suffer from charge leakage and rely on computers to recharge the capacitors several times per second, tunneling magnetoresistive (TMR) structures can be used. These TMR structures do not need to be recharged to reliably store data. Instead, they use spin states to store data!!! Major!!